Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation
In this article, we present contemporary research advancements on negative bias temperature instability (NBTI) degradation models which are responsible for p-MOSFET energy degradation. Hence, we propose a unified theory on the recent models in order to predict the transistor aging by considering the energy effect. Development of the newly modified model in this article is followed by a reassesment on NBTI models considering energy degradation. Unlike many of the previous models, the proposed theory of NBTI degradation projects the reliability in both stress and recovery phase; which follows power law.
Year of publication: |
2013
|
---|---|
Authors: | Karim, Nissar Mohammad ; Manzoor, Sadia ; Soin, Norhayati |
Published in: |
Renewable and Sustainable Energy Reviews. - Elsevier, ISSN 1364-0321. - Vol. 26.2013, C, p. 776-780
|
Publisher: |
Elsevier |
Subject: | Energy degradation | Reliability | CMOS lifetime |
Saved in:
Online Resource
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